1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
16 01.11.2003
2.
5

ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1 2
3
Type
Code
1.9
BSS 64 Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BSS 64
Collector-Emitter-voltage B open V
CE0
80 V
Collector-Base-voltage E open V
CB0
120 V
Emitter-Base-voltage C open V
EB0
5 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (dc) I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom I
CM
250 mA
Peak Base current – Basis-Spitzenstrom I
BM
100 mA
Junction temp. – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 90 V I
CB0
– – 100 nA
I
E
= 0, V
CB
= 90 V, T
j
= 150g47CI
CB0
– – 50 g58A
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V I
EB0
– 1 nA 200 nA
Collector saturation volt. – Kollektor-Sättigungsspg.
1
)
I
C
= 4 mA, I
B
= 0.4 mA V
CEsat
– – 150 mV
I
C
= 50 mA, I
B
= 15 mA V
CEsat
– – 200 mV