M39–1/2
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector– Emitter Voltage V
CEO
–100 Vdc
Collector– Emitter Voltage (R
BE
= 10 kΩ)V
CER
–110 Vdc
Collector Current — Continuous I
C
–100 mAdc
DEVICE MARKING
BSS63LT1 = T1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
225 mW
T
A
= 25°C
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
P
D
300 mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
– 100 — — Vdc
(I
C
= –100 µA)
Collector–Emitter Breakdown Voltage
V
(BR)CER
– 110 — — Vdc
(I
C
= –10 µAdc , I
E
=0, R
BE
=10 kΩ )
Collector–Base Breakdown Voltage
V
(BR)CBO
– 110 — — Vdc
(I
E
= – 10 µAdc, I
E
=0 )
Emitter –Base Breakdown Voltage
V
(BR)CBO
– 6.0 — — Vdc
(I
E
= – 10 µA)
Collector Cutoff Current
I
CBO
— — – 100 µAdc
(V
CB
= – 90 Vdc, I
E
=0 )
Collector Cutoff Current
I
CER
— — – 10 µAdc
(V
CB
= – 110 Vdc, R
BE
=10 kΩ )
Emitter Cutoff Current
I
EBO
— — – 200 µAdc
(V
EB
= – 6.0 Vdc, I
C
= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
1
3
2
BSS63LT1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE