BSS297
器件描述：SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：75.89KB，共7页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 12/05/1997
BSS 297
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 297 200 V 0.48 A 2 Ω TO-92 SS 297
Type Ordering Code Tape and Reel Information
BSS 297 Q67000-S118 E6288
BSS 297 Q67000-S292 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
200 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
200
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 25 °C
I
D
0.48
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.92
Power dissipation
T
A
= 25 °C
P
tot
1
W
BSS 297
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 297 200 V 0.48 A 2 Ω TO-92 SS 297
Type Ordering Code Tape and Reel Information
BSS 297 Q67000-S118 E6288
BSS 297 Q67000-S292 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
200 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
200
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 25 °C
I
D
0.48
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
1.92
Power dissipation
T
A
= 25 °C
P
tot
1
W