BSS63
器件描述：PNP General Purpose Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：61.95KB，共4页
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3
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch
applications requiring high voltages. Sourced from Process 74.
BSS63
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 100 V
V
CBO
Collector-Base Voltage 110 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: T3
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS63
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BSS63
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch
applications requiring high voltages. Sourced from Process 74.
BSS63
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 100 V
V
CBO
Collector-Base Voltage 110 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: T3
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS63
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BSS63
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.