BSS138
器件描述：N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
器件厂商：DIODES [Diodes Incorporated]
文件大小：92.3KB，共5页
Sponsor by e络盟器件资料摘要：
DS30144 Rev. 6 - 2 1 of 5 BSS138
www.diodes.com
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol BSS138 Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage R
GS
c163 20Kc87 VDGR 50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current Continuous ID 200 mA
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1) Rc113JA 417 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-23, Molded Plastic
c183 Case Material - UL Flammability Classification
Rating 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking (See Page 2): K38
c183 Ordering & Date Code Information: See Page 2
c183 Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
D
G S
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 c190 V V
GS
= 0V, I
D
= 250c109A
Zero Gate Voltage Drain Current IDSS c190c1900.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS c190c190c177100 nA V
GS
= c17720V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V V
DS
=V
GS
, I
D
=-250c109A
Static Drain-Source On-Resistance RDS (ON) c190 1.4 3.5 c87 VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 c190c190mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss c190c19050 pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance Coss c190c19025 pF
Reverse Transfer Capacitance Crss c190c1908.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) c190c19020 ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50c87
Turn-Off Delay Time tD(OFF) c190c19020 ns
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to miminize self-heating effect.
Source
Gate
Drain
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
c97 0c176 8c176
All Dimensions in mm
www.diodes.com
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol BSS138 Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage R
GS
c163 20Kc87 VDGR 50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current Continuous ID 200 mA
Power Dissipation (Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 1) Rc113JA 417 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-23, Molded Plastic
c183 Case Material - UL Flammability Classification
Rating 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking (See Page 2): K38
c183 Ordering & Date Code Information: See Page 2
c183 Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
D
G S
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 c190 V V
GS
= 0V, I
D
= 250c109A
Zero Gate Voltage Drain Current IDSS c190c1900.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS c190c190c177100 nA V
GS
= c17720V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V V
DS
=V
GS
, I
D
=-250c109A
Static Drain-Source On-Resistance RDS (ON) c190 1.4 3.5 c87 VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 c190c190mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss c190c19050 pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance Coss c190c19025 pF
Reverse Transfer Capacitance Crss c190c1908.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) c190c19020 ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50c87
Turn-Off Delay Time tD(OFF) c190c19020 ns
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to miminize self-heating effect.
Source
Gate
Drain
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
c97 0c176 8c176
All Dimensions in mm