BSS138W
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv/dt rated
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
A
=25 °C 0.28 A
T
A
=70 °C 0.22
Pulsed drain current I
D,pulse
T
A
=25 °C 1.12
Reverse diode dv/dt dv/dt
I
D
=0.28 A, V
DS
=48 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage V
GS
±20 V
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
Power dissipation P
tot
T
A
=25 °C 0.50 W
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
V
DS
60 V
R
DS(on),max
3.5 Ω
I
D
0.28 A
Product Summary
Type Package Ordering Code Tape and Reel Information Marking
BSS138W SOT-323 Q67042-S4187 E6327: 3000 pcs/reel SWs
BSS138W SOT-323 Q67042-S4191 E6433: 10000 pcs/reel SWs
SOT-323
Rev. 1.1 page 1 2004-04-16