BSS138W
器件描述：N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
器件厂商：DIODES [Diodes Incorporated]
文件大小：90.54KB，共5页
Sponsor by e络盟器件资料摘要：
DS30206 Rev. 3 - 2 1 of 5 BSS138W
www.diodes.com
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol BSS138W Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 1) VDGR 50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 2) Continuous ID 200 mA
Total Power Dissipation (Note 2) Pd 200 mW
Thermal Resistance, Junction to Ambient Rc113JA 625 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-323, Molded Plastic
c183 Case Material - UL Flammability Rating 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking Code (See Page 2): K38
c183 Ordering & Date Code Information: See Page 2
c183 Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
LED
B C
H
K
G
G S
D
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 50 75 c190 V V
GS
= 0V, I
D
= 250c109A
Zero Gate Voltage Drain Current IDSS c190c1900.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS c190c190c177100 nA V
GS
= c17720V, V
DS
= 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V V
DS
=V
GS
, I
D
= -250c109A
Static Drain-Source On-Resistance RDS (ON) c190 1.4 3.5 c87 VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 c190c190mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss c190c19050 pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance Coss c190c19025 pF
Reverse Transfer Capacitance Crss c190c1908.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) c190c19020 ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50c87
Turn-Off Delay Time tD(OFF) c190c19020 ns
Note: 1. R
GS
c163 20Kc87c46
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
c97 0c176 8c176
All Dimensions in mm
Source
Gate
Drain
www.diodes.com
BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol BSS138W Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 1) VDGR 50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 2) Continuous ID 200 mA
Total Power Dissipation (Note 2) Pd 200 mW
Thermal Resistance, Junction to Ambient Rc113JA 625 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-323, Molded Plastic
c183 Case Material - UL Flammability Rating 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking Code (See Page 2): K38
c183 Ordering & Date Code Information: See Page 2
c183 Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
LED
B C
H
K
G
G S
D
Electrical Characteristics
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 50 75 c190 V V
GS
= 0V, I
D
= 250c109A
Zero Gate Voltage Drain Current IDSS c190c1900.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS c190c190c177100 nA V
GS
= c17720V, V
DS
= 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V V
DS
=V
GS
, I
D
= -250c109A
Static Drain-Source On-Resistance RDS (ON) c190 1.4 3.5 c87 VGS = 10V, ID = 0.22A
Forward Transconductance gFS 100 c190c190mS VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss c190c19050 pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance Coss c190c19025 pF
Reverse Transfer Capacitance Crss c190c1908.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) c190c19020 ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50c87
Turn-Off Delay Time tD(OFF) c190c19020 ns
Note: 1. R
GS
c163 20Kc87c46
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
c97 0c176 8c176
All Dimensions in mm
Source
Gate
Drain