Prelim. 7/00
BUL58BSMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (I
B
= 0)
V
EBO
Emitter – Base Voltage (I
C
= 0)
I
C
Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
T
stg
Operating and Storage Temperature Range
180V
90V
10V
7A
10A
2A
50W
0.28W/°C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm
G33G2EG36G30G20G28G30G2EG31G34G32G29
G4DG61G78G2E
G33G2EG37G30G20G28G30G2EG31G34G36G29
G33G2EG34G31G20G28G30G2EG31G33G34G29
G33G2EG37G30G20G28G30G2EG31G34G36G29
G33G2EG34G31G20G28G30G2EG31G33G34G29
G30G2EG38G39
G28G30G2EG30G33G35G29
G6DG69G6EG2E
G34G2E
G31G34G20
G28
G30G2E
G31G36G33G29
G33G2E
G38G34G20
G28
G30G2E
G31G35G31G29
G31G30G2E
G36G39G20
G28
G30
G2E
G34
G32G31G29
G31G30G2E
G33G39G20
G28
G30
G2E
G34
G30G39G29
G39G2EG36G37G20G28G30G2EG33G38G31G29
G39G2EG33G38G20G28G30G2EG33G36G39G29
G31G31G2EG35G38G20G28G30G2EG34G35G36G29
G31G31G2EG32G38G20G28G30G2EG34G34G34G29
G31G36G2E
G30G32G20
G28
G30
G2E
G36
G33G31G29
G31G35G2E
G37G33G20
G28
G30
G2E
G36
G31G39G29
G30G2EG35G30G20G28G30G2EG30G32G30G29
G30G2EG32G36G20G28G30G2EG30G31G30G29
G30G2E
G37G36
G28
G30
G2E
G30G33G30G29
G6DG69
G6E
G2E
G31G33
G32
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
•SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
SMD1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter