S
O
T
23 N-C
H
A
NNE
L ENH
ANCE
ME
NT
M
O
D
E
V
E
R
TIC
AL D
MOS
FET
ISSUE 3

–
MA
R
C
H

1996
a37
P
ARTM
ARKIN
G DETAI
L

–
S
S
A
B
S
OL
UTE
M
A
XIM
UM

R
ATIN
GS.
P
A
RAMETER
SYMBOL
V
A
LUE
UNIT
D
r
ain-Sourc
e Volta
g
e
V
DS
50
V
Co
nt
i
n
uous Dr
ain Cur
r
e
n
t
at

T
am
b
=2
5
°
C
I
D
20
0
m
A
P
ulse
d Dr
ain Curr
ent
I
DM
80
0
m
A
G
a
t
e
-Sou
r
c
e
Voltage

V
GS
±
20
V
P
owe
r D
issipat
i
o
n a
t

T
amb
=25
°C
P
tot
36
0
m
W
O
per
a
ting
a
nd Stora
ge Tempe
r
a
ture
Ra
n
g
e
T
j
:T
st
g
-
5
5
to +1
5
0
°C
E
L
ECTR
ICA
L CH
ARA
CTERI
STIC
S

(
a
t
T
am
b

=

25
°
C
unless othe
rwise
sta
t
e
d
)
.
P
A
RAMETER
SYMBOL
MIN.
MIN.
M
A
X
.
U
N
I
T
CON
D
I
T
IONS.
D
r
ain-Sourc
e
B
r
e
akdown Voltage
BV
DS
S
50
V
I
D
=
0.2
5mA, V
GS
=0V
G
a
t
e
-Sou
r
c
e
Th
r
e
s
h
old
Vo
lt
a
g
e
V
G
S(th)
0.
5
1
.
5
V
I
D
=
1
mA, V
DS
= V
GS
G
a
t
e
-Bod
y
Le
a
k
age
I
GS
S
10
0
n
A
V
GS
=
±
2
0V, V
DS
=0
V
Z
e
ro Gat
e Volta
ge
D
r
ain Curr
ent
I
DS
S
0.
5
5 10
0
µ
A
µ
A
nA
V
DS
=5
0
V
,
V
GS
=0
V
DS
=5
0
V
,
V
GS
=
0
V, T
=
1
2
5°C
(2
)
V
DS
=2
0
V
,
V
GS
=0
Stat
ic Dr
ain-S
o
u
r
ce
O
n-St
a
t
e
Re
sista
nce (1
)
R
DS
(
o
n
)
3.
5
Ω
V
GS
=
5
V,I
D
=
2
0
0mA
Forwa
rd
T
r
ansc
o
nducta
n
c
e
(
1
)(
2
)
g
fs
12
0
m
S
V
DS
=2
5
V
,
I
D
=2
00
m
A
I
n
put Ca
pacit
ance
(2)
C
is
s
50
p
F
V
DS
=2
5
V
,
V
GS
=
0
V, f=1
MHz
Co
m
m
o
n
Sourc
e
O
utput Ca
pacit
ance (
2
)
C
oss
25
p
F
Rev
e
r
se Tr
ansf
e
r
Capac
itance
(2
)
C
rss
8p
F
T
u
r
n-O
n D
ela
y Time (
2
)
(3)
t
d(on)
10
n
s
V
DD
≈
3
0V, I
D
=
2
80m
A
Rise Time
(2)
(
3
)
t
r
10
n
s
T
u
r
n-O
f
f
De
lay
Time (
2
)
(
3
)
t
d(off)
15
n
s
F
a
ll T
ime

(
2
)
(
3
)
t
f
25
n
s
(
1
)
Mea
sure
d
under

p
u
l
sed condition
s
.
W
idt
h
=
3
0
0
µ
s
.
Du
ty
c
y
c
l
e

≤
2% (
2) S
ample t
est
.
(
3
)
Switching
t
imes
mea
sure
d
wit
h 50
Ω
sou
r
c
e
impedance
and <5
ns ris
e time
on a pulse ge
n
e
r
a
tor
BSS1
38
D
G
S
SOT23
3 -
7
2