Semiconductor Group 1 04.97
Type Ordering
Code
Tape and Reel
Information
Pin Configuration Marking Package
123
BSS 135 Q67000-S237 E6325: 2000 pcs/carton;
Ammopack
G D S SS135 TO-92
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
600 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
600
Gate-source voltage V
GS
± 14
Gate-source peak voltage, aperiodic V
gs
± 20
Continuous drain current, T
A
= 42 ˚C I
D
0.080 A
Pulsed drain current, T
A
= 25 ˚C I
D puls
0.24
Max. power dissipation, T
A
= 25 ˚C P
tot
1.0 W
Operating and storage temperature range T
j
, T
stg
– 55 … + 150 ˚C
Thermal resistance, chip-ambient
(without heat sink)
R
thJA
≤ 125 K/W
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
SIPMOS

Small-Signal Transistor BSS 135
1
2
3
a71 V
DS
600 V
a71 I
D
0.080 A
a71 R
DS(on)
60 Ω
a71 N channel
a71 Depletion mode
a71 High dynamic resistance
a71 Available grouped in V
GS(th)