BSS129
器件描述:SIPMOS Small-Signal Transistor(N channel Depletion mode High dynamic resistance)
文件大小:282.37KB,共6页
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器件资料摘要:
Semiconductor Group 1 04.97
Type Ordering
Code
Tape and Reel
Information
Pin Configuration Marking Package
123
BSS 129 Q62702-S015 E6288: 1500 pcs/reel;
2 reels/carton; gate first
G D S SS 129 TO-92
BSS 129 Q67000-S116 E6296: 1500 pcs/reel;
2 reels/carton; source first
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
240 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
240
Gate-source voltage V
GS
± 14
Gate-source peak voltage, aperiodic V
gs
± 20
Continuous drain current, T
A
= 37 ˚C I
D
0.15 A
Pulsed drain current, T
A
= 25 ˚C I
D puls
0.45
Max. power dissipation, T
A
= 25 ˚C P
tot
1.0 W
Operating and storage temperature range T
j
, T
stg
– 55 … + 150 ˚C
Thermal resistance, chip-ambient
(without heat sink)
R
thJA
≤ 125 K/W
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
SIPMOS
Small-Signal Transistor BSS 129
1
2
3
a71 V
DS
240 V
a71 I
D
0.15 A
a71 R
DS(on)
20 Ω
a71 N channel
a71 Depletion mode
a71 High dynamic resistance
a71 Available grouped in V
GS(th)