BSS124
器件描述：SIPMOS Small-Signal Transistor (N channel Enhancement mode)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：78.7KB，共7页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 12/05/1997
BSS 124
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• V
GS(th)
= 1.5 ...2.5 V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124
Type Ordering Code Tape and Reel Information
BSS 124 Q67000-S172 E6288
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
400 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
400
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 37 °C
I
D
0.12
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.48
Power dissipation
T
A
= 25 °C
P
tot
1
W
BSS 124
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• V
GS(th)
= 1.5 ...2.5 V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124
Type Ordering Code Tape and Reel Information
BSS 124 Q67000-S172 E6288
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
400 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
400
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 37 °C
I
D
0.12
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.48
Power dissipation
T
A
= 25 °C
P
tot
1
W