1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0084C0077C0079C0083 C0070C0069C0084 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
100 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
(1)
Pulsed
(2)
I
D
I
DM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(3)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BSS123LT1 = SA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 250 µAdc)
V
(BR)DSS
100 — — Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 100 Vdc) T
J
= 25°C
T
J
= 125°C
I
DSS
—
—
—
—
15
60
µAdc
Gate–Body Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
I
GSS
— — 50 nAdc
ON CHARACTERISTICS
(4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.8 — 2.8 Vdc
Static Drain–Source On–Resistance
(V
GS
= 10 Vdc, I
D
= 100 mAdc)
r
DS(on)
— 5.0 6.0 Ω
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 100 mAdc)
g
fs
80 — — mmhos
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
3. FR–5 = 1.0 C0002 0.75 C0002 0.062 in.
4. Pulse Test: Pulse Width C0118 300 C0109s, Duty Cycle C0118 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BSS123LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0083C0083C0049C0050C0051C0076C0084C0049
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 21
SOT–23 (TO–236AB)
 Motorola, Inc. 1997
3 DRAIN
2 SOURCE
1
GATE

REV 2