DS30368 Rev. 2 - 2 1 of 3 BSS123W
www.diodes.com
BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
c183 High Drain-Source Voltage Rating
Maximum Ratings
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 100 V
Drain-Gate Voltage R
GS
c163 20Kc87 VDGR 100 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 1) Continuous
Pulsed
I
D
I
DM
170
680
mA
Total Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) Rc113JA 625 c176C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 c176C
c183 Case: SOT-323, Molded Plastic
c183 Plastic Material - UL Flammability Classification
Rating 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking: K23 (See Page 3)
c183 Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
LED
B
C
H
K
G
G S
D
T
C
U
D
O
R
P
W
E
N
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
c97 0c176 8c176
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
Source
Gate
Drain