BSS101
器件描述：SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：79.15KB，共7页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 12/05/1997
BSS 101
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
S G D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101
Type Ordering Code Tape and Reel Information
BSS 101 Q62702-S493 E6288
BSS 101 Q62702-S636 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
240 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
240
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 33 °C
I
D
0.13
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.52
Power dissipation
T
A
= 25 °C
P
tot
0.63
W
BSS 101
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
S G D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101
Type Ordering Code Tape and Reel Information
BSS 101 Q62702-S493 E6288
BSS 101 Q62702-S636 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
240 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
240
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 33 °C
I
D
0.13
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.52
Power dissipation
T
A
= 25 °C
P
tot
0.63
W