BSS119
器件描述：SIPMOS Small-Signal Transistor (N channel Enhancement mode)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：134.57KB，共8页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Sep-13-1996
BSS 119
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• V
GS(th)
= 1.6 ...2.6 V
Pin 1 Pin 2 Pin 3
G S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 119 100 V 0.17 A 6 Ω SOT-23 sSH
Type Ordering Code Tape and Reel Information
BSS 119 Q67000-S007 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
100 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
100
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 28 °C
I
D
0.17
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.68
Power dissipation
T
A
= 25 °C
P
tot
0.36
W
BSS 119
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• V
GS(th)
= 1.6 ...2.6 V
Pin 1 Pin 2 Pin 3
G S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 119 100 V 0.17 A 6 Ω SOT-23 sSH
Type Ordering Code Tape and Reel Information
BSS 119 Q67000-S007 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
100 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
100
Gate source voltage V
GS
± 14
Gate-source peak voltage,aperiodic V
gs
± 20
Continuous drain current
T
A
= 28 °C
I
D
0.17
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
0.68
Power dissipation
T
A
= 25 °C
P
tot
0.36
W