©2002 Fairchild Semiconductor Corporation Rev. A, May 2002
BSR50
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Electrical Characteristics T
A
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 1.5 A
T
J
, T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 45 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
B
= 0 60 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 100µA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 45V, I
E
= 0 50 nA
I
EBO
Emitter Cut-off Current V
EB
= 4.0V, I
C
= 0 50 nA
h
FE
DC Current Gain V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 0.5A
1,000
2,000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 500µA
I
C
= 1.0A, I
B
= 4.0mA
1.3
1.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 500mA, I
B
= 500µA
I
C
= 1.0mA, I
B
= 4.0mA
0.9
2.2
V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 °C/W
1. Emitter 2. Collector 3. Base
BSR50
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 0.5A.
• Sourced from Process 06.
TO-92
1