BUF460AV
NPN TRANSISTOR POWER MODULE
n EASY TO DRIVE TECHNOLOGY (ETD)
n HIGH CURRENT POWER BIPOLAR MODULE
n VERY LOW R
th
JUNCTION CASE
n SPECIFIED ACCIDENTAL OVERLOAD
AREAS
n ISOLATED CASE (2500V RMS)
n EASY TO MOUNT
n LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
n MOTOR CONTROL
n SMPS & UPS
n WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V) 1000 V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0) 450 V
VEBO Emitter-Base Voltage (IC =0) 7 V
IC Collector Current 80 A
ICM Collector Peak Current (tp = 10 ms) 160 A
I
B
Base Current 18 A
I
BM
Base Peak Current (t
p
= 10 ms) 27 A
Ptot Total Dissipation at Tc =25
o
C 270 W
T
stg
Storage Temperature -65 to 150
o
C
Tj Max Operation Junction Temperature 150
o
C
VISO Insulation Withstand Voltage (AC-RMS) 2500 V
ISOTOP
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