Semiconductor Group Jan-15-1998Page 1
HITFETBSP 78Preliminary data
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with
auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Analog driving possible
Product Summary
Drain source voltage V40VDS
On-state resistance RDS(on) 50 m Ω
Nominal load current ID(Nom) 3 A
Clamping energy mJEAS 500
Application
• All kinds of resistive, inductive and capacitive loads in switching or linear
applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded
protection functions.
Pin Symbol Function
1 IN Input
2 DRAIN Output to the load
3 SOURCE Ground
TAB DRAIN Output to the load