2004-03-05Page 1
HITFET
g210
g32 II.Generation BSP 77
Smart Lowside Power Switch
Product Summary
Drain source voltage V
DS
42 V
On-state resistance R
DS(on)
100 mg87
Nominal load current I
D(Nom)
2.17 A
Clamping energy E
AS
250 mJ
Features
g183 Logic Level Input
g183 Input Protection (ESD)
g183 Thermal shutdown with
auto restart
g183 Overload protection
g183 Short circuit protection
g183 Overvoltage protection
g183 Current limitation
g183 Analog driving possible
VPS051631
2
3
4
Application
g183 All kinds of resistive, inductive and capacitive loads in switching
or linear applications
g183 µC compatible power switch for 12 V DC applications
g183 Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
g210
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
g226
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet