Preliminary data sheet HITFET
®
BSP 75A
Semiconductor Group Page 1 of 9 1998-02-04
Smart Lowside Power Switch
Features
•
Logic Level Input
•
Input protection (ESD)
•
Thermal shutdown (with restart)
•
Overload protection
•
Short circuit protection
•
Overvoltage protection
•
Current limitation
Application
•
All kinds of resistive, inductive and capacitive loads in switching applications
•
m C compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power

Technology. Fully protected by embedded protection functions.
protection
Overvoltage
Drain
IN
ESD
HITFET

Source
1
3
Over-
protection
temperature Short circuit
protection
+
limitation
V
bb
Short circuit
protection
LOAD
2
dv/dt
limitation
4
M
Current
Pin Symbol Function
1 IN Input
2 DRAIN Output to the load
3 SOURCE Ground
TAB SUBSTRATE Internally connected to source (pin 3)
Product Summary
Continuous drain source voltage V
DS
55 V
On-state resistance R
DS(ON)
550
mW
Current limitation I
D(lim)
1A
Load current (ISO) I
D(ISO)
0.7 A
Clamping energy E
AS
550 mJ