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BSP75
EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn 器件描述：Smart Lowside Power Switch (Logic Level Input Input protection ESD Thermal shutdown with restart) 器件厂商：SIEMENS [Siemens Semiconductor Group] 厂商主页：http://www.infineon.com/ 文件大小：55.17KB 文件页数：9 PDF阅读：BSP75.pdf (点击阅读器件资料) 摘要： HITFET ? BSP 75 Semiconductor Group Page 1 of 9 1998-02-04 Smart Lowside Power Switch Features ? Logic Level Input ? Input protection (ESD) ? Thermal shutdown (with restart) ? Overload protection ? Short circuit protection ? Overvoltage protection ? Current limitation Application ? All kinds of resistive, inductive and capacitive loads in switching applications ? m C compatible power switch for 12 V and 24 V DC applications ? Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. protection Overvoltage Drain IN ESD HITFET Source 1 3 Over- protection temperature Short circuit protection + limitation V bb Short circuit protection LOAD 2 dv/dt limitation 4 M Current Pin Symbol Function 1 IN Input 2 DRAIN Output to the load 3 SOURCE Ground TAB SUBSTRATE Must be connected to Pin 3 Product Summary Continuous drain source voltage V DS 55 V On-state resistance R DS(ON) 550 mW Current limitation I D(lim) 1A Nominal load current I D(Nom) 0.7 A Clamping energy E AS 550 mJ 相关器件：Q67060-S7200-A2

BSP75

EEWorld咨询电话：82357002，82350740－8068 邮件咨询：datasheet@eeworld.com.cn

器件描述：Smart Lowside Power Switch (Logic Level Input Input protection ESD Thermal shutdown with restart)
器件厂商：SIEMENS [Siemens Semiconductor Group]
厂商主页：http://www.infineon.com/
文件大小：55.17KB
文件页数：9
PDF阅读：BSP75.pdf (点击阅读器件资料)

摘要：
HITFET
?
BSP 75
Semiconductor Group Page 1 of 9 1998-02-04
Smart Lowside Power Switch
Features
?
Logic Level Input
?
Input protection (ESD)
?
Thermal shutdown (with restart)
?
Overload protection
?
Short circuit protection
?
Overvoltage protection
?
Current limitation
Application
?
All kinds of resistive, inductive and capacitive loads in switching applications
?
m C compatible power switch for 12 V and 24 V DC applications
?
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power

Technology. Fully protected by embedded protection functions.
protection
Overvoltage
Drain
IN
ESD
HITFET

Source
1
3
Over-
protection
temperature Short circuit
protection
+
limitation
V
bb
Short circuit
protection
LOAD
2
dv/dt
limitation
4
M
Current
Pin Symbol Function
1 IN Input
2 DRAIN Output to the load
3 SOURCE Ground
TAB SUBSTRATE Must be connected to Pin 3
Product Summary
Continuous drain source voltage V
DS
55 V
On-state resistance R
DS(ON)
550
mW
Current limitation I
D(lim)
1A
Nominal load current I
D(Nom)
0.7 A
Clamping energy E
AS
550 mJ

相关器件：Q67060-S7200-A2

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