BSP615S2L
器件描述：OptiMOS Power-Transistor
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：212.62KB，共8页
Sponsor by e络盟器件资料摘要：
2003-10-29
Page 1
BSP615S2L
OptiMOS
Power-Transistor
Product Summary
V
DS
55 V
R
DS(on)
90 mΩ
I
D
2.8 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
SOT 223
Marking
2N615L
Type Package Ordering Code
BSP615S2L SOT 223 Q67060-S7211
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
2.8
2.3
A
Pulsed drain current
T
A
=25°C
I
D puls
11
Gate source voltage V
GS
± 20
V
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/00
Page 1
BSP615S2L
OptiMOS
Power-Transistor
Product Summary
V
DS
55 V
R
DS(on)
90 mΩ
I
D
2.8 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
SOT 223
Marking
2N615L
Type Package Ordering Code
BSP615S2L SOT 223 Q67060-S7211
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
2.8
2.3
A
Pulsed drain current
T
A
=25°C
I
D puls
11
Gate source voltage V
GS
± 20
V
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/00