BSP613P
器件描述：SIPMOS Small-Signal-Transistor
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：163.73KB，共8页
Sponsor by e络盟器件资料摘要：
2004-06-02Page 1
BSP613P
SIPMOS Small-Signal-Transistor Product Summary
VDS -60 V
RDS(on) 0.13 Ω
ID -2.9 A
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
SOT-223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type Package Ordering Code
BSP613P SOT-223 Q67040-S4190
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-2.9
-2.3
A
Pulsed drain current
TA=25°C
ID puls -11.6
Avalanche energy, single pulse
ID=2.9 A , VDD=-25V, RGS=25Ω
EAS 150 mJ
Avalanche energy, periodic limited by Tjmax EAR 0.18
Reverse diode dv/dt
IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C
dv/dt 6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
BSP613P
SIPMOS Small-Signal-Transistor Product Summary
VDS -60 V
RDS(on) 0.13 Ω
ID -2.9 A
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
SOT-223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type Package Ordering Code
BSP613P SOT-223 Q67040-S4190
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-2.9
-2.3
A
Pulsed drain current
TA=25°C
ID puls -11.6
Avalanche energy, single pulse
ID=2.9 A , VDD=-25V, RGS=25Ω
EAS 150 mJ
Avalanche energy, periodic limited by Tjmax EAR 0.18
Reverse diode dv/dt
IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C
dv/dt 6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56