BSP60 ... BSP62
1 Nov-30-2001
PNP Silicon Darlington Transistors
G01 High collector current
G01 Low collector-emitter saturation voltage
G01 Complementary types: BSP50 ... BSP52 (NPN)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BSP60
BSP61
BSP62
BSP 60
BSP 61
BSP 62
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol
BSP60 BSP61 BSP62
Unit
Collector-emitter voltage V
CEO
45 60 80 V
Collector-base voltage V
CBO
60 80 90
Emitter-base voltage V
EBO
5 5 5
DC collector current I
C
1 A
Peak collector current I
CM
2
Base current mA100I
B
Total power dissipation, T
S
= 124 °C P
tot
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0117 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance