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BSP60

器件描述:PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:153.39KB,共5页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1
PNP Silicon Darlington Transistors BSP 60
… BSP 62
5.91
Maximum Ratings
Pin Configuration
1 2 3 4
B C E C
Type Ordering Code
(tape and reel)
Marking Package
1)
BSP 60
BSP 61
BSP 62
Q62702-P1166
Q62702-P1167
Q62702-P1168
BSP 60
BSP 61
BSP 62
SOT-223
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
Parameter Symbol Values Unit
Emitter-base voltage VEB0
Collector-base voltage VCB0
Junction temperature Tj ˚C
Total power dissipation, TS = 124 ˚C Ptot W
Storage temperature range Tstg
Collector-emitter voltage VCER V
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 72 K/W
5
1.5
150
– 65 … + 150
45 60
BSP 60 BSP 61
80
BSP 62
Collector current IC A1
Peak collector current ICM 2
Junction - soldering point Rth JS ≤ 17
60 80 90
Base current IB 0.1
a71 High collector current
a71 Low collector-emitter saturation voltage
a71 Complementary types: BSP 50 … BSP 52 (NPN)