©2002 Fairchild Semiconductor Corporation Rev. A, June 2002
BSP
5
2
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
A
=25°C unless otherwise noted
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage 80 V
V
CBO
Collector-Base Voltage 90 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 800 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ +150 °C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 90 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5 V
I
CES
Collector Cutoff Current V
CE
= 80V, V
BE
= 0 10 µA
I
EBO
Emitter Cutoff Current V
EB
= 4.0V, I
C
= 0 10 µA
On Characteristics
h
FE
DC Current Gain I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
1000
2000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 0.5mA 1.3 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 500mA, I
B
= 0.5mA 1.9 V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
1000
8.0
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 125 °C/W
BSP52
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter