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器件描述：NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
器件厂商：ZETEX [Zetex Semiconductors]
厂商主页：http://www.zetex.com/
文件大小：36.08KB
文件页数：1
PDF阅读：BSP43.pdf (点击阅读器件资料)
摘要：
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001 ?
COMPLEMENTARY TYPE – BSP33
PARTMARKING DETAIL – BSP43
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
90 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Base Current I
B
100 mA
Power Dissipation at T
amb
=25°C P
TOT
2W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
90 V I
C
=100?A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 V I
C
=10mA *
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5VI
E
=10?A
Collector Cut-Off Current I
CBO
100
50
nA
?A
V
CB
=60V
V
CB
=60V, T
amb
=125°C
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
1.2
V
V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Static Forward
Current Transfer Ratio
h
FE
30
100
50
300
I
C
=100?A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
Output Capacitance C
obo
12 pF V
CB
=10V, f=1MHz
Input Capacitance C
ibo
90 pF V
EB
=0.5V, f=1MHz
Transition Frequency f
T
100 MHz I
C
=50mA, V
CE
=10V
f =35MHz
Turn-On Time T
on
250 ns V
CC
=20V, I
C
=100mA
I
B1
=I
B2
=5mA
Turn-Off Time T
off
1000 ns
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
BSP43
C
C
E
B
TBA
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