1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverhältnis g35 2%
4 01.11.2003
4
321
3
±0.1
6.5
±0.2
0.7
3.25 2.3
7
±0
.
3
1.65
3.
5
±0
.2
BSP 40 ... BSP 43 Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung 1.3 W
Plastic case SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BSP 40
BSP 41
BSP 42
BSP 43
Collector-Emitter-voltage B open V
CE0
60 V 80 V
Collector-Base-voltage E open V
CB0
70 V 90 V
Emitter-Base-voltage C open V
EB0
5 V
Power dissipation – Verlustleistung P
tot
1.3 W
1
)
Collector current – Kollektorstrom (dc) I
C
1 A
Peak Collector current – Kollektor-Spitzenstrom I
CM
2 A
Peak Base current – Basis-Spitzenstrom I
BM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 60 V I
CB0
– – 100 nA
I
E
= 0, V
CB
= 60 V, T
j
= 150g47CI
CB0
– – 50 g58A
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 5 V I
EB0
– – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg.
2
)
I
C
= 150 mA, I
B
= 15 mA V
CEsat
– – 250 mV
I
C
= 500 mA, I
B
= 50 mA V
CEsat
– – 500 mV