Semiconductor Group 1 04.97
TEMPFET

BTS 113A
3
2
1
Features
a71 N channel
a71 Logic level
a71 Enhancement mode
a71 Temperature sensor with thyristor characteristic
a71 The drain pin is electrically shorted to the tab
Pin 1 2 3
GDS
Type V
DS
I
D
R
DS(on)
Package Ordering Code
BTS 113A 60 V 11.5 A 0.17 Ω TO-220AB C67078-S5015-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
60 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
60
Gate-source voltage V
GS
± 10
Continuous drain current, T
C
= 25 °C I
D
11.5 A
ISO drain current
T
C
= 85 ˚C, V
GS
= 10 V, V
DS
= 0.5 V
I
D-ISO
2.2
Pulsed drain current, T
C
= 25 °C I
D puls
46
Short circuit current, T
j
= – 55 ... + 150 °C I
SC
27
Short circuit dissipation, T
j
= – 55 ... + 150 °C P
SCmax
400 W
Power dissipation P
tot
40
Operating and storage temperature range T
j
, T
stg
– 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
≤ 3.1
≤ 75
K/W