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器件描述：4k】8 bit electrically erasable PROM
器件厂商：ROHM [Rohm]
厂商主页：http://www.rohm.com/
文件大小：443.37KB
文件页数：26
PDF阅读：BR24L32.pdf (点击阅读器件资料)
摘要：
BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W
Memory ICs
1/25
4k×8 bit electrically erasable PROM
BR24L32-W / BR24L32F-W / BR24L32FJ-W
BR24L32FV-W
The BR24L32-W series is 2-wire (I
2
C BUS type) serial EEPROMs which are electrically programmable.
? I
2
C BUS is a registered trademark of Philips.
zApplications
General purpose
zFeatures
1) 4k registers × 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Automatic erase.
5) 32byte Page Write Mode.
6) Low power consumption.
Write (5V) : 1.5mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1?A (Typ.)
7) DATA security
Write protect feature (WP pin).
Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin
9) High reliability EEPROM with Double-Cell structure.
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCL,SDA for noise suppression.
14) Initial data FFh in all address.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Supply voltage ?0.3 to +6.5 V
Power dissipation mW
Storage temperature ?65 to +125 °C
Operating temperature °C
Terminal voltage ? V
?40 to +85
VCC
?0.3 to VCC+0.3
Pd
Tstg
Topr
?1
450(SOP8)
800(DIP8)
?2
?3
300(SSOP-B8)
?1 Degradation is done at 8.0mW/°C for operation above 25°C.
?2,3 Degradation is done at 4.5mW/°C for operation above 25°C.
?4 Degradation is done at 3.0mW/°C for operation above 25°C.
450(SOP-J8)
?4
相关器件：BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32-W
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