2003-02-21Page 1
Rev. 1.0 BSP324
SIPMOS Power-Transistor Product Summary
VDS 400 V
RDS(on) 25 Ω
ID 0.17 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated SOT-223
Marking
BSP324
Type Package Ordering Code Tape and Reel Information
BSP324 SOT-223 Q67000-S215 E6327: 1000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.17
0.14
A
Pulsed drain current
TA=25°C
ID puls 0.68
Reverse diode dv/dt
IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C
dv/dt 6 kV/µs
Gate source voltage VGS ±20 V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56