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器件描述:SIPMOS Power-Transistor
器件厂商:INFINEON [Infineon Technologies AG]
厂商主页:http://www.infineon.com/
文件大小:108.2KB
文件页数:8
PDF阅读:BSP324.pdf (点击阅读器件资料)
摘要:
2003-02-21Page 1 Rev. 1.0 BSP324 SIPMOS Power-Transistor Product Summary VDS 400 V RDS(on) 25 ? ID 0.17 A Feature ? N-Channel ? Enhancement mode ? Logic Level ? dv/dt rated SOT-223 Marking BSP324 Type Package Ordering Code Tape and Reel Information BSP324 SOT-223 Q67000-S215 E6327: 1000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.17 0.14 A Pulsed drain current TA=25°C ID puls 0.68 Reverse diode dv/dt IS=0.17A, VDS=320V, di/dt=200A/?s, Tjmax=175°C dv/dt 6 kV/?s Gate source voltage VGS ±20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
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