Semiconductor Group 1 29/01/1998
BSP 320 S
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking Ordering Code
BSP 320 S 60 V 2.9 A 0.12 Ω SOT-223 Q67000-S4001
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
TA = 100 °C
ID
1.85
2.9
A
DC drain current, pulsed
TA = 25 °C
IDpuls
11.6
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25 Ω
L = 14.3 mH, Tj = 25 °C
EAS
60
mJ
Avalanche energy, periodic limited by Tj(max) EAR 0.18
Avalanche current, repetitive,limited by Tj(max) IAR 2.9 A
Reverse diode dv/dt
IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
dv/dt
6
KV/µs
Gate source voltage VGS ± 20 V
Power dissipation
TA = 25 °C
Ptot
1.8
W