Semiconductor Group 1 Sep-12-1996
BSP 319
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• V
GS(th)
= 1.2 ...2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSP 319 50 V 3.8 A 0.07 Ω SOT-223 BSP 319
Type Ordering Code Tape and Reel Information
BSP 319 Q67000-S273 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
A
= 29 °C
I
D
3.8
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
15
Avalanche energy, single pulse
I
D
= 3.8 A, V
DD
= 25 V, R
GS
= 25 Ω
L = 6.2 mH, T
j
= 25 °C
E
AS
90
mJ
Gate source voltage V
GS
± 14 V
Gate-source peak voltage,aperiodic V
gs
± 20
Power dissipation
T
A
= 25 °C
P
tot
1.8
W