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器件描述:SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated)
器件厂商:SIEMENS [Siemens Semiconductor Group]
厂商主页:http://www.infineon.com/
文件大小:165.76KB
文件页数:9
PDF阅读:BSP319.pdf (点击阅读器件资料)
摘要:
Semiconductor Group 1 Sep-12-1996 BSP 319 SIPMOS ? Small-Signal Transistor ? N channel ? Enhancement mode ? Logic Level ? Avalanche rated ? V GS(th) = 1.2 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type V DS I D R DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 ? SOT-223 BSP 319 Type Ordering Code Tape and Reel Information BSP 319 Q67000-S273 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current T A = 29 °C I D 3.8 A DC drain current, pulsed T A = 25 °C I Dpuls 15 Avalanche energy, single pulse I D = 3.8 A, V DD = 25 V, R GS = 25 ? L = 6.2 mH, T j = 25 °C E AS 90 mJ Gate source voltage V GS ± 14 V Gate-source peak voltage,aperiodic V gs ± 20 Power dissipation T A = 25 °C P tot 1.8 W
相关器件:Q67000-S273
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