1999-10-28
Page 1
BSP318S
Final data
SIPMOS

Small-Signal-Transistor
Features
• N-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Drain source voltage VV
DS
60
Drain-Source on-state resistance R
DS(on)
0.09
Ω
Continuous drain current AI
D
2.6
VPS051631
2
3
4
Type Package Ordering Code
BSP318S SOT-223 Q67000-S4002
Pin 1 Pin 2, 4 PIN 3
G D S
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current 2.6 AI
D
Pulsed drain current
T
A
= 25 °C
I
D puls
10.4
Avalanche energy, single pulse
I
D
= 2.6 A, V
DD
= 25 V, R
GS
= 25 Ω
60 mJE
AS
Avalanche current,periodic limited by T
jmax
AI
AR
2.6
Avalanche energy, periodic limited by T
jmax
0.18 mJE
AR
Reverse diode dv/dt
I
S
= 2.6 A, V
DS
= 20 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
kV/µsdv/dt 6
Gate source voltage
±20
VV
GS
Power dissipation
T
A
= 25 °C
WP
tot
1.8
Operating and storage temperature T
j
, T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56