Semiconductor Group 1 29/01/1998
BSP 318 S
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = 1.2 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking Ordering Code
BSP 318 S 60 V 2.6 A 0.15 Ω SOT-223 BSP 318 S Q 67000-S127
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
TA = 100 °C
ID
1.7
2.6
A
DC drain current, pulsed
TA = 25 °C
IDpuls
10.4
Avalanche energy, single pulse
ID = 2.6 A, VDD = 25 V, RGS = 25 Ω
L = 10 mH, Tj = 25 °C
EAS
60
mJ
Avalanche energy, periodic limited by Tj(max) EAR 0.18
Avalanche current, repetitive,limited by Tj(max) IAR 2.6 A
Reverse diode dv/dt
IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
dv/dt
6
KV/µs
Gate source voltage VGS ± 14 V
Power dissipation
TA = 25 °C
Ptot
1.8
W