BSP316
器件描述：SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：173.75KB，共9页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1 Sep-12-1996
BSP 316
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th)
= -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316
Type Ordering Code Tape and Reel Information
BSP 316 Q67000-S92 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
-100 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
-100
Gate source voltage V
GS
± 20
Continuous drain current
T
A
= 24 °C
I
D
-0.65
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
-2.6
Power dissipation
T
A
= 25 °C
P
tot
1.8
W
BSP 316
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th)
= -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316
Type Ordering Code Tape and Reel Information
BSP 316 Q67000-S92 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
-100 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
-100
Gate source voltage V
GS
± 20
Continuous drain current
T
A
= 24 °C
I
D
-0.65
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
-2.6
Power dissipation
T
A
= 25 °C
P
tot
1.8
W