2002-07-17Page 1
Preliminary data
BSP 317 P
SIPMOS

Small-Signal-Transistor
Product Summary
V
DS
-250 V
R
DS(on)
4 Ω
I
D
-0.43 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
SOT-223
VPS051631
2
3
4
Gate
pin1
Drain
pin 2/4
Source
pin 3
Marking
BSP317P
Type Package Ordering Code Tape and Reel Information
BSP 317 P
SOT-223 Q67042-S4167
-
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D

-0.43
-0.34
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.72
Reverse diode dv/dt
I
S
=-0.43A, V
DS
=-200V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56