BSP315
器件描述:SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
文件大小:174.92KB,共9页
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器件资料摘要:
Semiconductor Group 1 Sep-12-1996
BSP 315
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th)
= -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSP 315 -50 V -1.1 A 0.8 Ω SOT-223 BSP 315
Type Ordering Code Tape and Reel Information
BSP 315 Q67000-S75 E6327
BSP 315 Q67000-S249 E6433
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
-50 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
-50
Gate source voltage V
GS
± 20
Continuous drain current
T
A
= 39 °C
I
D
-1.1
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
-4.4
Power dissipation
T
A
= 25 °C
P
tot
1.8
W