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BSP280
EEWorld咨询电话:82357002,82350740-8068 邮件咨询:datasheet@eeworld.com.cn
器件描述:IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
器件厂商:SIEMENS [Siemens Semiconductor Group]
厂商主页:http://www.infineon.com/
文件大小:167.17KB
文件页数:5
PDF阅读:BSP280.pdf  (点击阅读器件资料)

摘要:
Type Ordering Code Tape and Reel
Information
Pin Configuration Marking Package
1234
BSP 280 Q67000-S279 E6327: 1000 pcs/reel G C E C BSP 280 SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Continuous collector current
Soldering point, T
S
= 25 ?C
T
S
= 80 ?C
I
C
2.5
1.5
A
Continuous collector current ambient, T
A
= 80 ?C I
C
0.5
Pulsed collector current
Soldering point, T
S
= 80 ?C
I
C puls
3.0
Collector-emitter voltage V
CE
1000 V
Gate-emitter voltage V
GE
– 20
Power dissipation
Soldering point, T
S
= 80 ?C
Ambient T
A
= 25 ?C
P
tot
10
1.8
W
Operating and storage temperature range T
j
, T
stg
– 40 … + 150 ?C
Thermal resistance
1)
chip-ambient
chip-soldering point
R
thJA
R
thJS
70
6
K/W
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 40/150/56
IGBT = Insulated Gate Bipolar Transistor
1)
Transistor on epoxy pcb 40 mm · 40 mm · 1.5 mm with 6 cm
2
copper area for drain connection.
IGBT Transistor BSP 280
Preliminary Data
l V
CE
1000 V
l I
C
2.5 A
l N channel
l MOS input (voltage-controlled)
l High switch speed
l Very low tail current
l Latch-up free
l Suitable freewheeling diode BAX 280

相关器件:Q67000-S279

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