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器件描述:IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
器件厂商:SIEMENS [Siemens Semiconductor Group]
厂商主页:http://www.infineon.com/
文件大小:167.17KB
文件页数:5
PDF阅读:BSP280.pdf (点击阅读器件资料)
摘要:
Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1234 BSP 280 Q67000-S279 E6327: 1000 pcs/reel G C E C BSP 280 SOT-223 Maximum Ratings Parameter Symbol Values Unit Continuous collector current Soldering point, T S = 25 ?C T S = 80 ?C I C 2.5 1.5 A Continuous collector current ambient, T A = 80 ?C I C 0.5 Pulsed collector current Soldering point, T S = 80 ?C I C puls 3.0 Collector-emitter voltage V CE 1000 V Gate-emitter voltage V GE – 20 Power dissipation Soldering point, T S = 80 ?C Ambient T A = 25 ?C P tot 10 1.8 W Operating and storage temperature range T j , T stg – 40 … + 150 ?C Thermal resistance 1) chip-ambient chip-soldering point R thJA R thJS 70 6 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 40/150/56 IGBT = Insulated Gate Bipolar Transistor 1) Transistor on epoxy pcb 40 mm · 40 mm · 1.5 mm with 6 cm 2 copper area for drain connection. IGBT Transistor BSP 280 Preliminary Data l V CE 1000 V l I C 2.5 A l N channel l MOS input (voltage-controlled) l High switch speed l Very low tail current l Latch-up free l Suitable freewheeling diode BAX 280
相关器件:Q67000-S279
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