BSP171P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv/dt rated
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D T
A
=25 °C
1)
A
T
A
=70 °C
1)
Pulsed drain current I
D,pulse
T
A
=25 °C
Avalanche energy, single pulse E
AS
I
D
=-1.9 A, R
GS
=25 Ω mJ
Reverse diode dv/dt dv/dt
I
D
=-1.9 A,
V
DS
=-48 V,
di/dt=-200 A/µs,
T
j,max
=150 °C
kV/µs
Gate source voltage V
GS
V
Power dissipation P
tot T
A
=25 °C
1)
W
Operating and storage temperature T
j
, T
stg
°C
IEC climatic category; DIN IEC 68-1 55/150/56
-55 ... 150
±20
-6
-1.9
-1.5
1.8
Value
70
-7.6
steady state
V
DS
-60 V
R
DS(on),max
0.3 Ω
I
D
-1.9 A
Product Summary
Type Package Ordering Code Marking
BSP 171 P SOT-223 Q67041-S4019 171P
SOT-223
Rev. 2.0 page 1 2004-01-20