Semiconductor Group 04 / 19981
BSP 171 P
Preliminary data
SIPMOS Power Transistor
• P-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated Pin 1
Pin2/4 Pin 3
G D S
Type VDS ID RDS(on) @ VGS Package Ordering Code
BSP 171 P

-60 V -1.8 A 0.3 Ω VGS = -10 V P-SOT223-4-1
-
Q67041-S4019
-
Continuous drain current
TA = 25 °C
TA = 100 °C
ID
-1.8
-1.15
A
-7.2Pulsed drain current
TA = 25 °C
ID puls
mJAvalanche energy, single pulse
ID = -1.8 A, VDD = -25 V, RGS = 25 Ω
70EAS
Avalanche current,periodic limited by Tjmax IAR A-1.8
0.18 mJAvalanche energy,periodic limited by Tj(max) EAR
KV/µsdv/dtReverse diode dv/dt
IS = -1.8 A, VDD ≤ V(BR)DSS, di/dt = 100 A/µs,
Tjmax = 150 °C
6
Gate source voltage VGS ±14 V
1.8 WPower dissipation, TA = 25 °C Ptot
°COperating temperature -55 ...+150Tj
Storage temperature Tstg -55 ...+150
55/150/56IEC climatic category; DIN IEC 68-1
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Value UnitParameter Symbol