2002-01-16Page 1
Final data
BSP 170 P
SIPMOS

Small-Signal-Transistor
Product Summary
V
DS
-60 V
R
DS(on)
0.3 Ω
I
D
-1.9 A
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
SOT-223
VPS051631
2
3
4
Gate
pin1
Drain
pin 2
Source
pin 3
Type Package Ordering Code
BSP 170 P SOT-223 Q67041-S4018
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D

-1.9
-1.5
A
Pulsed drain current
T
A
=25°C
I
D puls
-7.6
Avalanche energy, single pulse
I
D
=-1.9 A , V
DD
=-25V, R
GS
=25Ω
E
AS
70 mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.18
Reverse diode dv/dt
I
S
=-1.9A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56