BLV31
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:14.86KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV 0
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 30 V
BV
CES
I
C
= 25mA V
BE
= 0 V 60 V
BV
EBO
I
E
= 10 mA 4 V
h
FE
V
CE
= 25 V I
C
= 800 mA 15 75 120 ---
C
OB
V
CB
= 25 V f = 1.0 MHz 35 pF
POUT
PG
V
CE
= 25 V I
C
= 800 mA P
IN
= 2.5 W
F = 224 MHz T= 70
O
C
5.0
15
7.0*
16.5*
W
dB
* @ 25
O
C
NPN SILICON RF POWER TRANSISTOR
BLV31
DESCRIPTION:
The ASI BLV31 is Designed for use
in VHF amplifiers
FEATURES:
• P
G
= 16.5 dB Typical at 224 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I
C
3A
V
CB
60 V
P
DISS
48 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
3.5
O
C/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / m m
H .245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
E
E
B
C