1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0083C0079C0084C0045C0050C0050C0051 C0080C0097C0099C0107C0097C0103C0101
C0072C0105C0103C0104 C0086C0111C0108C0116C0097C0103C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–300 Vdc
Collector–Base Voltage V
CBO
–350 Vdc
Emitter–Base Voltage V
EBO
–6.0 Vdc
Collector Current I
C
–1000 mAdc
Base Current I
B
–500 mAdc
Total Device Dissipation, T
A
= 25°C
(1)
P
D
1.5 Watts
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
150 °C
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –50 mAdc, I
B
= 0, L = 25 mH)
V
(BR)CEO
–300 —
Vdc
Collector–Base Breakdown Voltage
(I
C
= –100 C0109Adc, I
E
= 0)
V
(BR)CBO
–300 —
Vdc
Collector–Emitter Cutoff Current
(V
CE
= –250 Vdc, I
B
= 0)
I
CES
— –50
µAdc
Collector–Base Cutoff Current
(V
CB
= –280 Vdc, I
E
= 0)
I
CBO
— –1.0
µAdc
Emitter–Base Cutoff Current
(V
EB
= –6.0 Vdc, I
C
= 0)
I
EBO
— –20
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BSP16T1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
 Motorola, Inc. 1996
C0066C0083C0080C0049C0054C0084C0049
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 2