BSP170
器件描述:SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated)
文件大小:101.7KB,共8页
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器件资料摘要:
Semiconductor Group 1 22/05/1997
BSP 170
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Avalanche rated
• V
GS(th)
= -2.1...-4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type V
DS
I
D
R
DS(on)
Package Marking
BSP 170 -60 V -1.7 A 0.35 Ω SOT-223
Type Ordering Code Tape and Reel Information
BSP 170 Q67000-S . . . E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
A
= 25 °C
I
D
-1.7
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
-6.8
Avalanche energy, single pulse
I
D
= -1.7 A, V
DD
= -25 V, R
GS
= 25 Ω
L = 3.23 mH, T
j
= 25 °C
E
AS
8
mJ
Gate source voltage V
GS
± 20 V
Power dissipation
T
A
= 25 °C
P
tot
1.8
W