SOT223
PNP SILICON PLANAR
HI
GH VOLTAGE TRANSISTOR
ISSUE 3
AUGUST 1
995
FEAT
URE
S
*H
i
g
h
V
CEO
*
Low sa
turation volta
g
e
COMPL
E
M
E
NT
A
RY T
Y
P
E
:

B
S
P1
9
P
A
R
T
M
ARKI
NG
DE
T
A
IL
: BSP16
ABSO
L
U
TE M
A
XI
M
U
M
RATI
NG
S.
PA
R
A
M
ETER
SY
M
B
O
L
V
A
L
U
E
U
N
I
T
Co
l
l
ec
t
o
r
-
B
a
s
e
Vo
l
t
ag
e
V
CBO
-
350
V
C
o
lle
c
to
r-
E
m
it
te
r V
o
lta
g
e
V
CEO
-
300
V
E
m
itte
r
-
B
a
s
e
V
o
lt
a
g
e
V
EBO
-6
V
Peak
Pu
l
s
e
Cur
r
ent
I
CM
-1
A
Co
n
t
i
n
uo
u
s
Co
l
l
ec
t
o
r
Cu
r
r
e
n
t
I
C
-0.5
A
Po
w
e
r
D
i
ssi
pat
i
on
at
T
am
b
=2
5

C
P
to
t
2W
O
p
er
a
t
i
n
g and
St
or
age T
e
m
p
er
a
t
ur
e
R
a
nge
T
j
:T
st
g
-
55 t
o
+
150

C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
u
n
l
e
ss other
w
i
s
e st
ate
d
)
.
PA
R
A
M
ETER
SY
M
B
O
L
M
I
N
.
M
A
X
.
U
N
I
T
C
O
N
D
I
TI
O
N
S
.
Co
l
l
ec
t
o
r
-
B
a
s
e
Br
eakdow
n V
o
l
t
ag
e

V
(B
R
)
C
B
O
-35
0
V
I
C
=-
1
0
0
µ
A
C
o
lle
c
to
r-
E
m
it
te
r
Br
eakdow
n V
o
l
t
ag
e
V
(B
R
)
C
E
O
-30
0
V
I
C
=-
1
0
m
A
Em
i
t
t
e
r
-
Ba
se

Br
ea
k
d
o
w
n
Vo
l
t
ag
e
V
(B
R
)
E
B
O
-5
V
I
E
=-
1
0
0
µ
A
C
o
lle
c
to
r C
u
t-
O
ff
Cu
r
r
e
nt
I
CB
O
-1
µ
A
V
CB
=-
280
V
E
m
it
t
e
r
C
u
t-
O
f
f
C
u
rren
t
I
EBO
-20
µ
A
V
EB
=-
6
V
C
o
lle
c
to
r-
E
m
it
te
r
S
a
t
u
rati
o
n
V
o
l
t
a
g
e
V
CE
(
s
a
t
)
- 2
.
0
-0.5
V V
I
C
=-
5
0
m
A
,
I
B
=-
5m
A
*
I
C
=-
3
0
m
A
,
I
B
=-
3m
A
*
S
t
a
t
ic
F
o
rw
ard
C
u
rren
t
Tr
ans
f
er
R
a
t
i
o
h
FE
30
120
I
C
=-
5
0
m
A
,
V
CE
=-
10V*
Tr
ansi
t
i
on Fr
equency
f
T
15
M
H
z
I
C
=-
1
0
m
A
,
V
CE
=-
10V*
f =
3
0
M
H
z
O
u
t
put
C
a
p
a
ci
t
a
nce
C
ob
o
15
pF
V
CB
=-
10V,
f
=
1
M
Hz
*M
eas
u
r
ed
un
der pu
l
s
ed
c
o
nd
i
t
i
o
n
s
.
P
u
l
s
e w
i
d
t
h=
300
µ
s.
D
u
ty
cy
c
l
e

≤
2%
Fo
r
t
y
p
i
c
a
l
char
act
e
ri
s
t
i
c
s
g
r
ap
hs s
ee FM
M
T
A
9
2

dat
a
s
h
eet
.
BSP16
C
C
E
B
3 - 59