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BSP129

器件描述:SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
器件厂商:SIEMENS [Siemens Semiconductor Group]
文件大小:321.36KB,共7页
Sponsor by e络盟
器件资料摘要:
Semiconductor Group 1 09.96
Type Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1234
BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223
BSP 129 Q67000-S314 E7941: 1000 pcs/reel
V
GS(th)
selected in groups:
(see page 212)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS
240 V
Drain-gate voltage, R
GS
= 20 kΩ V
DGR
240
Gate-source voltage V
GS
± 14
Gate-source peak voltage, aperiodic V
gs
± 20
Continuous drain current, T
A
= 34 ˚C I
D
0.2 A
Pulsed drain current, T
A
= 25 ˚C I
D puls
0.6
Max. power dissipation, T
A
= 25 ˚C P
tot
1.7 W
Operating and storage temperature range T
j
, T
stg
– 55 … + 150 ˚C
Thermal resistance
1)
chip-ambient
chip-soldering point
R
thJA
R
thJS
72
12
K/W
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm
2
copper area for drain connection.
SIPMOS

Small-Signal Transistor BSP 129
a71 V
DS
240 V
a71 I
D
0.2 A
a71 R
DS(on)
20 Ω
a71 N channel
a71 Depletion mode
a71 High dynamic resistance
a71 Available grouped in V
GS(th)