BSP135
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
A
=25 °C 0.12 A
T
A
=70 °C 0.10
Pulsed drain current I
D,pulse
T
A
=25 °C 0.48
Reverse diode dv/dt dv/dt
I
D
=0.12 A, V
DS
=20 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage V
GS
±20 V
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
Power dissipation P
tot
T
A
=25 °C 1.8 W
Operating and storage temperature T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
V
DS
600 V
R
DS(on),max
60 Ω
I
DSS,min
0.02 A
Product Summary
Type Package Ordering Code Tape and Reel Information Marking
BSP135 SOT-223 Q62702-S655 E6327: 1000 pcs/reel BSP135
SOT-223
Rev. 1.0 page 1 2003-04-03