1999-09-22
Page 1
Preliminary data
BSO 612 CV
SIPMOS

Small-Signal-Transistor
Product Summary N P
Drain source voltage V
DS
60 -60 V
Drain-Source on-state
resistance
R
DS(on)
0.12 0.3
Ω
Continuous drain current I
D
3 -2 A
Features
• Dual N- and P -Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Type Package Ordering Code
BSO 612 CV SO 8 Q67041-S4015
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
N P
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D

3
2.4

-2
-1.6
A
Pulsed drain current
T
A
= 25 °C
I
D puls
12 -8
Avalanche energy, single pulse
I
D
= 3 A, V
DD
= 25 V, R
GS
= 25 Ω
I
D
= -2 A, V
DD
= -25 V, R
GS
= 25 Ω
E
AS

47
-

-
70
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.2 0.2
Reverse diode dv/dt, T
jmax
= 150 °C
I
S
= 3 A, V
DS
= 48 V, di/dt = 200 A/µs
I
S
= -2 A, V
DS
= -48 V, di/dt = -200 A/µs
dv/dt
6
-

-
6
kV/µs
Gate source voltage V
GS
±20 ±20 V
Power dissipation
T
A
= 25 °C
P
tot
2 2 W
Operating and storage temperature T
j
, T
stg
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56